Wolfspeed’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10-lead metal/ceramic flanged package (CMPA801B025F) or small form-factor pill package (CMPA801B025P) for optimal electrical and thermal performance.
Peak Output Power
L-Band / S-Band / X-Band / C-Band / Ku-Band
Typical Power Added Efficiency PAE
Typical Power (PSAT)
8.0 - 11.0 GHz
Flange and Pill
Yes - 50Ω
- Additional Information
SKU RAY-CMPA801B025 Part Number N/A Applications N/A Country of Manufacture United States Manufacture WolfSpeed (Cree) Conditions Not Used. New & Original Manufacture Pack Lead Time Ready To Ship Export Terms Out of US. ITAR Free. not need License For Re-Export.