welcome to Rayemit Innovation Group

WolfSpeed/Cree - CGHV96100F2

More Views

WolfSpeed/Cree - CGHV96100F2
$999.00

Availability: In stock

WolfSpeed/Cree - CGHV96100F2,


 100-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched, GaN HEMT Power Amplifier (Ready to Ship, Without License Export from US)

Description

Details

Wolfspeed’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

 

Peak Output Power

100 W

Application

L-Band / S-Band / X-Band / C-Band / Ku-Band

Typical Power Added Efficiency PAE

45 %

Typical Power (PSAT)

145 W

Power Gain

10 dB

Operating Voltage

40 V

Frequency

7.9 - 9.6 GHz

Package Type

Flange

Internal Matching

Yes - 50Ω

Additional Information

Additional Information

SKU RAY-CGHV96100F2
Part Number
RAY-CGHV96100F2
Applications
X-Band Microwave Power Amplifier
Country of Manufacture United States
Manufacture WolfSpeed (Cree)
Conditions Not Used. New & Original Manufacture Pack
Lead Time Ready To Ship
Export Terms Out of US. ITAR Free. not need License For Re-Export.
Reviews

Product Tags

Use spaces to separate tags. Use single quotes (') for phrases.