Wolfspeed’s CGHV96050F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
Peak Output Power
L-Band / S-Band / X-Band / C-Band / Ku-Band
Typical Power Added Efficiency PAE
Typical Power (PSAT)
7.9 - 9.6 GHz
Yes - 50Ω
- Additional Information
SKU RAY-X-050-01 Part Number N/A Applications N/A Country of Manufacture United States Manufacture WolfSpeed (Cree) Conditions Not Used. New & Original Manufacture Pack Lead Time Ready To Ship Export Terms Out of US. ITAR Free. not need License For Re-Export.